Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Gallium nitride (GaN) is the main component of modern-day high electron mobility transistors due to its favorable electronic properties. As devices become smaller with more complex surface architecture, ability deposit high-quality GaN films at low temperatures required. Herein, we report a new highly volatile Ga(III) triazenide precursor and demonstrate epitaxial by atomic layer deposition (ALD). This triazenide, first hexacoordinated Ga–N bonded used in vapor process, was easily synthesized purified either sublimation or recrystallisation. Thermogravimetric analysis showed single-step volatilization an onset temperature 155 °C negligible residual mass. Three intervals self-limiting growth were observed when depositing films. The grown second interval 350 on 4H–SiC without AlN seed found have near stoichiometric Ga/N ratio very levels impurities. In addition, microstructure smooth film sharp interface between substrate film. band gap these 3.41 eV Fermi level 1.90 eV, showing that unintentionally n-type-doped. enables ALD for semiconductor applications provides future processes.